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IRFIB5N65A

Part Number	IRFIB5N65A
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Dec 15, 2020
Detailed Description	iscN-Channel MOSFET Transistor IRFIB5N65A ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.93Ω (MAX) ·Enhancement...
Datasheet	IRFIB5N65A PDF File

Overview

iscN-Channel MOSFET Transistor IRFIB5N65A ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.
93Ω (MAX) ·Enhancement mode: Vth = 2.
0 to 4.
0V (VDS = 10 V, ID=0.
25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 5.
1 A IDM Drain Current-Single Pulsed 21 A PD Total Dissipation @TC=25℃ 60 W Tj Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL P...

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