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IRFIBC40G

Part Number	IRFIBC40G
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Dec 15, 2020
Detailed Description	iscN-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 1.2Ω (MAX) ·Enhancement mode: Vth =...
Datasheet	IRFIBC40G PDF File

Overview

iscN-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 1.
2Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.
25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 3.
5 A IDM Drain Current-Single Pulsed 14 A PD Total Dissipation @TC=25℃ 40 W Tj Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch...

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