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IRFP21N60L

INCHANGE
Part Number IRFP21N60L
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Dec 15, 2020
Detailed Description iscN-Channel MOSFET Transistor IRFP21N60L ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.32Ω (MAX) ·Enhancement...
Datasheet PDF File IRFP21N60L PDF File

IRFP21N60L
IRFP21N60L

Overview
iscN-Channel MOSFET Transistor IRFP21N60L ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.
32Ω (MAX) ·Enhancement mode: Vth = 3.
0 to 5.
0V (VDS = 10 V, ID=0.
25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 21 A IDM Drain Current-Single Pulsed 84 A PD Total Dissipation @TC=25℃ 330 W Tj Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.
38 UNIT ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark iscN-Channel MOSFET Transistor IRFP21N60L ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 0.
25mA 600 V VGS(th) Gate Threshold Voltage VDS= 10V; ID=0.
25mA 3.
0 5.
0 V RDS(on) Drain-Source On-Resistance VGS=10V; ID=13A 0.
32 Ω IGSS IDSS VSDF Gate-Source Leakage Current VGS= ±30V;VDS= 0V Drain-Source Leakage Current VDS=600V; VGS= 0V VDS=480V; VGS= 0V;TJ=125℃ Diode forward voltage IDR =21A, VGS = 0 V ±100 nA 0.
05 2.
0 mA 1.
5 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Please contact us if you intend our products to be used in these special applications.
I...


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