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IRFP140

Part Number	IRFP140
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Dec 15, 2020
Detailed Description	iscN-Channel MOSFET Transistor IRFP140 ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤77mΩ @VGS=10V ·Enhancement ...
Datasheet	IRFP140 PDF File

Overview

iscN-Channel MOSFET Transistor IRFP140 ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤77mΩ @VGS=10V ·Enhancement mode: Vth = 2.
0 to 4.
0V (VDS = 10 V, ID=0.
25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 31 A IDM Drain Current-Single Pulsed 120 A PD Total Dissipation @TC=25℃ 180 W Tj Max.
Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.
83 UNIT ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark iscN-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown ...

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