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EPC2039

EPC
Part Number EPC2039
Manufacturer EPC
Description Power Transistor
Published Dec 17, 2020
Detailed Description eGaN® FET DATASHEET EPC2039 – Enhancement Mode Power Transistor VDS , 80 V RDS(on) , 25 mΩ ID , 6.8 A D G S EPC2039 ...
Datasheet PDF File EPC2039 PDF File

EPC2039
EPC2039

Overview
eGaN® FET DATASHEET EPC2039 – Enhancement Mode Power Transistor VDS , 80 V RDS(on) , 25 mΩ ID , 6.
8 A D G S EPC2039 EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR.
The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
Maximum Ratings PARAMETER VALUE UNIT Drain-to-Source Voltage (Continuous) 80 VDS Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C) 96 V ID Continuous (TA = 25°C, RθJA = 70°C/W) Pulsed (25°C, TPULSE = 300 µs) Gate-to-Source Voltage VGS Gate-to-Source Voltage TJ Operating Temperature TSTG Storage Temperature 6.
8 A 50 6 V –4 –40 to 150 °C –40 to 150 Thermal Characteristics PARAMETER TYP UNIT RθJC Thermal Resistance, Junction-to-Case 3 ...


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