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4800B

Part Number	4800B
Manufacturer	Vishay
Description	N-Channel MOSFET
Published	Dec 18, 2020
Detailed Description	Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.018...
Datasheet	4800B PDF File

Overview

Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.
0185 at VGS = 10 V 0.
030 at VGS = 4.
5 V ID (A) 9 7 FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • High-Efficient PWM Optimized • 100 % UIS and Rg Tested S1 S2 S3 G4 SO-8 Top View 8D 7D 6D 5D Ordering Information: Si4800BDY-T1-E3 (Lead (Pb)-free) Si4800BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Unit Drain-Source Voltage Gate-Source Voltage VDS 30 V VGS ± 25 Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C TA = 70 °C ID 9 6.
5 7.
0 5.
0 Pulsed Drain Current (10 µs Pulse Width) IDM 40 A Continuous Source Current (Diode Conduction)a, b IS 2.
3 Avalanche Current Single-Pulse Avalanche Energy IAS 15 L = 0.
1 mH EAS 11.
25 mJ Maximum Power Dissipationa, b TA = 25 °C TA = 70 °C...

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