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FIR80N075P

First Semiconductor
Part Number FIR80N075P
Manufacturer First Semiconductor
Description N-Channel Power MOSFET
Published Dec 20, 2020
Detailed Description N-Channel Enhancement Mode Power MOSFET General Description The FIR80N075PG uses advanced trench technology and design t...
Datasheet PDF File FIR80N075P PDF File

FIR80N075P
FIR80N075P

Overview
N-Channel Enhancement Mode Power MOSFET General Description The FIR80N075PG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in PWM, load switching and general purpose applications.
Features ƽ VDS=75V；ID=80A@ VGS=10V； RDS(ON)<8mΩ @ VGS=10V ƽ Special process technology for high ESD capability ƽ Special designed for Convertors and power controls ƽ High density cell design for ultra low Rdson ƽ Fully characterized Avalanche voltage and current ƽ Good stability and uniformity with high EAS ƽ Excellent package for good heat dissipation FIR80N075PG PIN Connection TO-220 GDS D G S Marking Diagram Application ƽ Power swit...


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