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UPA1456H

NEC
Part Number UPA1456H
Manufacturer NEC
Description NPN SILICON POWER TRANSISTOR ARRAY
Published Dec 26, 2020
Detailed Description DATA SHEET SILICON TRANSISTOR ARRAY µPA1456 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE (DARLINGTON TRANS...
Datasheet PDF File UPA1456H PDF File

UPA1456H
UPA1456H

Overview
DATA SHEET SILICON TRANSISTOR ARRAY µPA1456 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR) INDUSTRIAL USE DESCRIPTION The µPA1456 is NPN silicon epitaxial Darlington Power Transistor Array that built in 4 circuits designed for driving solenoid, relay, lamp and so on.
FEATURES • Easy mount by 0.
1 inch of terminal interval.
• High hFE for Darlington Transistor.
PACKAGE DIMENSION (in millimeters) 26.
8 MAX.
4.
0 10 2.
5 MIN.
ORDERING INFORMATION Part Number µPA1456H Package 10 Pin SIP Quality Grade Standard Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C) Collector to Base Voltage VCBO 150 V Collector to Emitter Voltage VCEO 100 V Emitter to Base Voltage VEBO 7 V Collector Current (DC) IC(DC) ±5 A/unit Collector Current (pulse) IC(pulse)* ±10 A/unit Base Current (DC) IB(DC) 0.
5 A/unit Total Power Dissipation PT1** 3.
5 W Total Power Dissipation PT2*** 28 W Junction Temperature Tj 150 ˚C Storage Temperature Tstg –55 to +150 ˚C * PW ≤ 300 µs, Duty Cycle ≤ 10 % ** 4 Circuits, Ta = 25 ˚C *** 4 Circuits, Tc = 25 ˚C 2.
54 1.
4 0.
6 ±0.
1 1.
4 0.
5 ±0.
1 1 2 3 4 5 6 7 8 9 10 CONNECTION DIAGRAM 3 5 7 9 2 4 6 8 1 10 (C) (B) R1 R2 (E) PIN No.
2, 4, 6, 8: Base (B) 3, 5, 7, 9: Collector (C) 1, 10 : Emitter (E) R1 =.
.
3.
0 kΩ R2 =.
.
300 Ω The information in this document is subject to change without notice.
Document No.
IC-3521 (O.
D.
No.
IC-6340) Date Published September 1994 P Printed in Japan © 1994 µPA1456 ELECTRICAL CHARACTERISTICS (Ta = 25 ˚C) CHARACTERISTIC Collector Leakage Current Emitter Leakage Current DC Current Gain DC Current Gain Collector Saturation Voltage Base Saturation Voltage Turn On Time Storage Time Fall Time SYMBOL ICBO IEBO hFE1 * hFE2 * * VCE(sat) * VBE(sat) ton ...


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