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10N50TF

PINGWEI
Part Number 10N50TF
Manufacturer PINGWEI
Description N-Channel MOSFET
Published Dec 31, 2020
Detailed Description 10N50TF 10 Amps,500 Volts N-CHANNEL Power MOSFET FEATURE  10A,500V,RDS(ON)MAX=0.75Ω@VGS=10V/5A  Low gate charge  Lo...
Datasheet PDF File 10N50TF PDF File

10N50TF
10N50TF


Overview
10N50TF 10 Amps,500 Volts N-CHANNEL Power MOSFET FEATURE  10A,500V,RDS(ON)MAX=0.
75Ω@VGS=10V/5A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability  Halogen free TO-220TF Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Reverse Diode dV/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds VDSS VGSS ID IDM EAS dv/dt TJ,TSTG TL Mounting Torque 6-32 or M3 screw Parameter Thermal resistance , Channel to Case Thermal resistance , Channel to Ambient Maximum Power Dissipation TC=25℃ Symbol Rth(ch-c) Rth(ch-a) PD 10N50TF 500 ±30 10 40 580 5 -55to+150 260 10 1.
1 10N50TF 3.
13 62.
5 40 UNIT V A mJ V/ns ℃ ℃ lbf·in N·m Units ℃/W ℃/W W http:// www.
perfectway.
cn Electrical Characteristics (Tc=25℃,unless otherwise noted) Parameter Symbol Test Conditions Min Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V,ID=250uA 500 Breakdown Temperature Coefficient ΔBVDSS /ΔTJ Reference to 25℃ ， － ID=250uA Zero Gate Voltage Drain Current IDSS VDS=500V,VGS=0V － Gate-Body Leakage Current,Forward IGSSF VGS=30V,VDS=0V － Gate-Body Leakage Current,Reverse IGSSR VGS=-30V,VDS=0V － On Characteristics Gate-Source Threshold Voltage VGS(th) VDS=VGS,ID=250uA 2 Drain-Source On-State Resistance RDS(on) VGS=10V,ID=5A － Dynamic Characteristics Input Capacitance Ciss VDS=25V,VGS=0V, － Output Capacitance Coss f=1.
0MHZ － Reverse Transfer Capacitance Crss － Switching Characteristics Turn-On Delay Time td(on) VDD=250V,ID=10A, － Turn-On Rise Time tr RG=10Ω (Note3,4) － Turn-Off Delay Time td(off) － Turn-Off Fall Time tf － Total Gate Charge Qg VDS=400V,ID=10A, － Gate-Source Charge Qgs VGS=10V, (Note3,4) － Gate-Drain Charge Qgd － Drain-...


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