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2N5884

Part Number	2N5884
Manufacturer	INCHANGE
Description	PNP Power Transistor
Published	Jan 7, 2021
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO=-80V(Min) ·Minimum Lot-to...
Datasheet	2N5884 PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO=-80V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -25 A IB Base Current-Continuous PD Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -7.
5 A 200 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ 2N5884 isc website： www.
iscsemi.
com 1 isc & iscsemi is registe...

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