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AOB482L

Alpha & Omega Semiconductors
Part Number AOB482L
Manufacturer Alpha & Omega Semiconductors
Description N-Channel MOSFET
Published Jan 8, 2021
Detailed Description AOT482L/AOB482L 80V N-Channel MOSFET SDMOS TM General Description Product Summary The AOT482L/AOB482L is fabricated w...
Datasheet PDF File AOB482L PDF File

AOB482L
AOB482L

Overview
AOT482L/AOB482L 80V N-Channel MOSFET SDMOS TM General Description Product Summary The AOT482L/AOB482L is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.
The result is outstanding efficiency with controlled switching behavior.
This universal technology is well suited for PWM, load switching and general purpose applications.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 7V) 100% UIS Tested 100% Rg Tested 80V 105A < 7.
2mΩ < 9mΩ Top View TO220 Bottom View D D Top View TO-263 D2PAK Bottom View D D G DS S DG Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.
1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG S G Maximum 80 ±25 105 82 330 11 9 82 336 333 167 2.
1 1.
3 -55 to 175 G S Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 11 47 0.
36 Max 15 60 0.
45 D G S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Pev 0: May 2010 www.
aosmd.
com Page 1 of 7 AOT482L/AOB482L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) ID(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current ID=250µA, VGS=0V 80 V VDS=80V, VGS=0V TJ=55°C 10 µA 50 VDS=0V, VGS= ±25V 100 nA VDS=VGS ID=250µA 2.
5 3.
1 3.
7 V VGS=10V, VDS=5V 330 A VGS=10V, ID=20A TO220 TJ=125°C 5.
9 7.
2 mΩ 11 13 RDS(ON) Static Drain-Source On-Resistance VGS=7V,...


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