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HM4884

H&M semi
Part Number HM4884
Manufacturer H&M semi
Description Dual N-Channel MOSFET
Published Jan 10, 2021
Detailed Description HM Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM uses advanced trench technology and design ...
Datasheet PDF File HM4884 PDF File

HM4884
HM4884

Overview
HM Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
 GENERAL FEATURES ●VDS =40V,ID =10A RDS(ON) < 24mΩ @ VGS=10V RDS(ON) < 35mΩ @ VGS=4.
5V Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current Application ● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply HM  Marking and pin Assignment SOP-8 top view Package Marking And Ordering Information Device Marking Device De...


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