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MS3004

ON Semiconductor
Part Number MS3004
Manufacturer ON Semiconductor
Description P-Channel Power MOSFET
Published Jan 13, 2021
Detailed Description Ordering number : ENA1908B BMS3004 P-Channel Power MOSFET –75V, –68A, 8.5mΩ, TO-220F-3SG http://onsemi.com Features •...
Datasheet PDF File MS3004 PDF File

MS3004
MS3004

Overview
Ordering number : ENA1908B BMS3004 P-Channel Power MOSFET –75V, –68A, 8.
5mΩ, TO-220F-3SG http://onsemi.
com Features • ON-resistance RDS(on)1=6.
5mΩ (typ.
) • Input capacitance Ciss=13400pF (typ.
) • 4V drive TO-220F-3SG Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 EAS Avalanche Current *2 IAV Note :*1 VDD=--48V, L=100μH, IAV=--54A (Fig.
1) *2 L≤100μH, Single pulse Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings Unit --75 V ±20 V --68 A --272 A 2.
0 W 40 W 150 °C --55 to +150 °C 380 mJ --54 A Stresses exceeding Maximum Ratings may damage the device.
Maximum Ratings are stress ratings only.
Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta=25°C Parameter Drain to Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain to Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain “Miller” Charge Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Symbol Conditions V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD trr Qrr ID=--1mA, VGS=0V VDS=--75V, VGS=0V VGS=±16V, VDS=0V VDS=--10V, ID=--1mA VDS=--10V, ID=--34A ID=--34A, VGS=--10V ID=--34A, VGS=--4V VDS=--20V, f=1MHz See Fig.
2 VDS=--48V, VGS=--10V, ID=--68A IS=--68A, VGS=0V See Fig.
3 IS=--68A, VGS=0V, di/dt=--100A/μs Ratings Unit min typ max --75 V --10 μA ±10 μA...


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