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CPC3730C

IXYS
Part Number CPC3730C
Manufacturer IXYS
Description N-Channel FET
Published Jan 13, 2021
Detailed Description INTEGRATED CIRCUITS DIVISION V(BR)DSX / V(BR)DGX 350VP RDS(on) (max) 35 IDSS (min) 140mA Package SOT-89 Features •...
Datasheet PDF File CPC3730C PDF File

CPC3730C
CPC3730C

Overview
INTEGRATED CIRCUITS DIVISION V(BR)DSX / V(BR)DGX 350VP RDS(on) (max) 35 IDSS (min) 140mA Package SOT-89 Features • Low RDS(on) at Cold Temperatures • RDS(on) 35 max.
at 25ºC • High Input Impedance • High Breakdown Voltage: 350VP • Low VGS(off) Voltage: -1.
6 to -3.
9V • Small Package Size: SOT-89 Applications • Ignition Modules • Normally-On Switches • Solid State Relays • Converters • Telecommunications • Power Supply CPC3730 350V N-Channel Depletion-Mode FET Description The CPC3730 is an N-channel, depletion mode, field effect transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process.
The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process.
Our vertical DMOS process yields a robust device, with high input impedance, for use in high power applications.
The CPC3730 is a highly reliable FET device that has been used extensively in our solid state relays for industrial and telecommunications applications.
This device excels in power applications requiring low drain-source resistance, particularly in cold environments such as automotive ignition modules.
The CPC3730 offers a low, 35 maximum, on-state resistance at 25ºC.
The CPC3730 has a minimum breakdown voltage of 350VP , and is available in an SOT-89 package.
As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown.
Ordering Information Part # CPC3730CTR Description N-Channel Depletion Mode FET, SOT-89 Pkg.
Tape and Reel (1000/Reel) Package Pinout D G D S (SOT-89) Circuit Symbol D G S DS-CPC3730-R01 www.
ixysic.
com 1 INTEGRATED CIRCUITS DIVISION CPC3730 Absolute Maximum Ratings @ 25ºC Parameter Ratings Units Drain-to-Source Voltage Gate-to-Source Voltage Pulsed Drain Current Power Dissipation 1 350 VP ±15 VP 600 mA 1.
4 W Junction Temperature +125 ºC Operational Temperature -55 to +125 ºC Storage Temperature ...


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