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AOTF11N62

Part Number	AOTF11N62
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Jan 19, 2021
Detailed Description	isc N-Channel MOSFET Transistor AOTF11N62 FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 620V...
Datasheet	AOTF11N62 PDF File

Overview

isc N-Channel MOSFET Transistor AOTF11N62 FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 620V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.
65Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 620 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 11 A IDM Drain Current-Single Pluse 39 A PD Total Dissipation @TC=25℃ 50 W TJ Max.
Operating Junction Temperature -55~150 ℃ T...

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