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AOU3N60

INCHANGE
Part Number AOU3N60
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Jan 20, 2021
Detailed Description isc N-Channel MOSFET Transistor AOU3N60 FEATURES ·Drain Current –ID= 2.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(M...
Datasheet PDF File AOU3N60 PDF File

AOU3N60
AOU3N60

Overview
isc N-Channel MOSFET Transistor AOU3N60 FEATURES ·Drain Current –ID= 2.
5A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =3.
5Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 2.
5 A IDM Drain Current-Single Pluse 8.
0 A PD Total Dissipation @TC=25℃ 56.
8 W TJ Max.
Operating Junction Temperature -55~150 ℃ T...


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