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AOY2N60

Alpha & Omega Semiconductors
Part Number AOY2N60
Manufacturer Alpha & Omega Semiconductors
Description N-Channel MOSFET
Published Jan 20, 2021
Detailed Description AOY2N60 600V,2A N-Channel MOSFET General Description • Advanced High Voltage MOSFET technology • Low RDS(ON) • Low Ciss...
Datasheet PDF File AOY2N60 PDF File

AOY2N60
AOY2N60

Overview
AOY2N60 600V,2A N-Channel MOSFET General Description • Advanced High Voltage MOSFET technology • Low RDS(ON) • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant Product Summary VDS @ Tj,max ID (at VGS=10V) RDS(ON) (at VGS=10V) 700V 2A < 4.
7W Applications • General Lighting for LED and CCFL • AC/DC Power supplies for Industrial, Consumer, and Telecom 100% UIS Tested 100% Rg Tested TO251B D Top View Bottom View D S D G AOY2N60 Orderable Part Number AOY2N60 G D S Package Type TO-251B Form Tube G S Minimum Order Quantity 3500 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain TC=25°C CurrentB TC=100°C Pulsed Drain Current C Avalanche Current C,I Repetitive avalanche energy C,I Single pulsed avalanche energy H Peak diode recovery dv/dt VDS VGS ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25oC PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL Maximum 600 ±30 2 1.
4 6 4.
6 10.
6 97 5 57 0.
45 -50 to 150 300 Units V V A A mJ mJ V/ns W W/ oC °C °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F Symbol RqJA RqCS RqJC Typical 40 1.
8 Maximum 50 0.
5 2.
2 Units °C/W °C/W °C/W Rev.
1.
1: February 2022 www.
aosmd.
com Page 1 of 6 AOY2N60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V, TJ=25°C ID=250μA, VGS=0V, TJ=150°C BVDSS /∆TJ Zero Gate Voltage Drain Current ID=250μA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=600V, VGS=0V VDS=480V, TJ=125°C IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=1A gFS Forward Transconduct...


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