DatasheetsPDF.com

R6007JND3 Datasheet PDF


Part Number R6007JND3
Manufacturer INCHANGE
Title N-Channel MOSFET
Description ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT...
Features
·Drain Current
  –ID=7A@ TC=25℃
·Drain Source Voltage- : VDSS=600V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 780mΩ(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
·Designed for use in switch mode power supplies and ...

File Size 261.40KB
Datasheet R6007JND3 PDF File








Similar Ai Datasheet

R6007JND3 : R6007JND3   Nch 600V 7A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 0.780Ω ±7A 96W lFeatures 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lOutline TO-252                lInner circuit    Datasheet   lApplication Switching lPackaging specifications Packing Embossed Tape Packing code TL1 Marking R6007JND3 Quantity (pcs) 2500 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage VDSS 600 V Continuous drain current (Tc = 25°C) ID*1 ±7 A Pulsed drain current IDP*2 ±21 A Gate - Source voltage VGSS ±3.

R6007JNJ : R6007JNJ   Nch 600V 7A Power MOSFET VDSS RDS(on)(Max.) ID PD 600V 0.780Ω ±7A 96W lFeatures 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lOutline LPT(S)                lInner circuit    Datasheet   lApplication Switching lPackaging specifications Packing Embossed Tape Packing code TL Marking R6007JNJ Quantity (pcs) 1000 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage VDSS 600 V Continuous drain current (Tc = 25°C) ID*1 ±7 A Pulsed drain current IDP*2 ±21 A Gate - Source voltage VGSS ±30 .

R6007JNJ : ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 7 A IDM Drain Current-Single Pluse 21 A PD Total Dissipation @TC=25℃ 96 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.29 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise speci.

R6007JNX : R6007JNX   Nch 600V 7A Power MOSFET    Datasheet lOutline VDSS 600V TO-220FM   RDS(on)(Max.) 0.780Ω   ID ±7A   PD 46W            lFeatures 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lInner circuit lApplication Switching lPackaging specifications Packing Tube Packing code C7 G Marking R6007JNX Basic ordering unit (pcs) 2000 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage VDSS 600 V Continuous drain current (Tc = 25°C) ID*1 ±7 A Pulsed drain current IDP*2 ±21 A Gate - Source .

R6007JNX : ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 7 A IDM Drain Current-Single Pluse 21 A PD Total Dissipation @TC=25℃ 46 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 2.7 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise spec.




Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)