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TTC5460B

Toshiba
Part Number TTC5460B
Manufacturer Toshiba
Description Silicon NPN Transistor
Published Jan 21, 2021
Detailed Description Bipolar Transistors Silicon NPN Triple-Diffused Type TTC5460B 1. Applications • Dynamic Focus • High-Voltage Switching •...
Datasheet PDF File TTC5460B PDF File

TTC5460B
TTC5460B

Overview
Bipolar Transistors Silicon NPN Triple-Diffused Type TTC5460B 1.
Applications • Dynamic Focus • High-Voltage Switching • High-Voltage Amplifiers 2.
Features (1) High collector voltage : VCEO = 800 V 3.
Packaging and Internal Circuit (Note) TTC5460B 1.
Emitter 2.
Collector 3.
Base TO-126N Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation voltage.
Therefore, as with the case with non-isolated devices, care should be taken with regard to electrical isolation from surrounding parts.
©2016 Toshiba Corporation 1 Start of commercial production 2014-02 2016-02-05 Rev.
1.
0 TTC5460B 4.
Absolute Maximum Ratings (Note) (Ta = 25  ...


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