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14N80K5

STMicroelectronics
Part Number 14N80K5
Manufacturer STMicroelectronics
Description N-channel Power MOSFET
Published Jan 25, 2021
Detailed Description STP14N80K5 N-channel 800 V, 0.400 Ω typ., 12 A MDmesh™ K5 Power MOSFET in a TO-220 package Datasheet - production data ...
Datasheet PDF File 14N80K5 PDF File

14N80K5
14N80K5


Overview
STP14N80K5 N-channel 800 V, 0.
400 Ω typ.
, 12 A MDmesh™ K5 Power MOSFET in a TO-220 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code STP14N80K5 VDS 800 V RDS(on) max.
0.
445 Ω ID 12 A  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100% avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.
The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Order code STP14N80K5 Table 1: Device summary Marking Package 14N80K5 TO-220 Packing Tube March 2016 DocID029058 Rev 1 This is information on a product in full production.
1/14 www.
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com Contents Contents STP14N80K5 1 Electrical ratings .
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3 2 Electrical characteristics .
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4 2.
1 Electrical characteristics (curves) .
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6 3 Test circuits 9 4 Package information .
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10 4.
1 TO-220 type A package information.
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11 5 Revision history .
13 2/14 DocID029058 Rev 1 STP14N80K5 Electrical ratings 1 Electrical ratings Symbol Table 2: Absolute maximum ratings Parameter Value Unit VGS ID ID ID(1) PTOT dv/dt (2) dv/dt (3) Tstg TJ Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C Drain current (pulsed) Total dissipation at TC = 25 °C Peak diode re...


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