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TC75S51FE

Part Number TC75S51FE
Manufacturer Toshiba
Title Single Operational Amplifier
Description TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TC75S51FE TC75S51FE Single Operational Amplifier The TC75S51FE is a CMOS single-operat...
Features
• Low-voltage operation : VDD = ±0.75 to ±3.5 V or 1.5 to 7 V
• Low-current power supply : IDD (VDD = 3 V) = 60 µA (typ.)
• Built-in phase-compensated op-amp, obviating the need for any external device
• Ultra-compact package TC75S51FE SON5-P-0.50 (ESV) Weight SON5-P-0.50 : 0.003 g (typ.) Absolute...

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Datasheet TC75S51FE PDF File







Similar Datasheet

TC75S51F : TC75S51F/FU TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TC75S51F, TC75S51FU Single Operational Amplifier The TC75S51F/TC75S51FU is a CMOS single-operation amplifier which incorporates a phase compensation circuit. It is designed with a low-voltage and low-current power supply; this differentiates this device from generalpurpose bipolar op-amps. Features • Low-voltage operation : VDD = ±0.75 to ±3.5 V or 1.5 to 7 V • Low-current power supply : IDD (VDD = 3 V) = 60 µA (typ.) • Built-in phase-compensated op-amp, obviating the need for any external device • Ultra-compact package TC75S51F TC75S51FU (SMV) Absolute Maximum Ratings (Ta = 25°C) Characteristics Supply voltage Differ.

TC75S51FU : TC75S51F/FU TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TC75S51F, TC75S51FU Single Operational Amplifier The TC75S51F/TC75S51FU is a CMOS single-operation amplifier which incorporates a phase compensation circuit. It is designed with a low-voltage and low-current power supply; this differentiates this device from generalpurpose bipolar op-amps. Features • Low-voltage operation : VDD = ±0.75 to ±3.5 V or 1.5 to 7 V • Low-current power supply : IDD (VDD = 3 V) = 60 µA (typ.) • Built-in phase-compensated op-amp, obviating the need for any external device • Ultra-compact package TC75S51F TC75S51FU (SMV) Absolute Maximum Ratings (Ta = 25°C) Characteristics Supply voltage Differ.




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