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3DD401

Part Number	3DD401
Manufacturer	INCHANGE
Description	Silicon NPN Power Transistor
Published	Feb 22, 2021
Detailed Description	isc Silicon NPN Power Transistor 3DD401 DESCRIPTION ·Collector-Emitter Breakdown Voltage- :V(BR)CEO= 150V(Min) ·Wide A...
Datasheet	3DD401 PDF File

Overview

isc Silicon NPN Power Transistor 3DD401 DESCRIPTION ·Collector-Emitter Breakdown Voltage- :V(BR)CEO= 150V(Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications.
·Vertical output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.
5 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
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