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FJP13009

Part Number	FJP13009
Manufacturer	INCHANGE
Description	Silicon NPN Power Transistor
Published	Feb 22, 2021
Detailed Description	isc Silicon NPN Power Transistor FJP13009 DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·...
Datasheet	FJP13009 PDF File

Overview

isc Silicon NPN Power Transistor FJP13009 DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.
) ·Collector Saturation Voltage : VCE(sat) = 1.
5 (Max) @ IC= 8.
0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are particularly suited for 115 and 220V switchmode applications such as switching regulators,inverters,Motor controls,Solenoid/Relay drivers and deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitte...

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