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APT18F60B

INCHANGE
Part Number APT18F60B
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Feb 23, 2021
Detailed Description isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 19A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Stati...
Datasheet PDF File APT18F60B PDF File

APT18F60B
APT18F60B

Overview
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 19A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.
37Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 19 A IDM Drain Current-Single Pluse 65 A PD Total Dissipation @TC=25℃ 335 W TJ Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.
37 ℃/W APT18F60B isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor APT18F60B ELECTRICAL CHARACTERISTICS TC=25℃ unles...


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