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APT5015BVFR

Advanced Power Technology
Part Number APT5015BVFR
Manufacturer Advanced Power Technology
Description Power MOSFET
Published Feb 25, 2021
Detailed Description APT5015BVFR APT5015SVFR 500V 32A 0.150Ω POWER MOS V ® FREDFET Power MOS V® is a new generation of high voltage N-Channe...
Datasheet PDF File APT5015BVFR PDF File

APT5015BVFR
APT5015BVFR

Overview
APT5015BVFR APT5015SVFR 500V 32A 0.
150Ω POWER MOS V ® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance.
Power MOS V® also achieves faster switching speeds through optimized gate layout.
BVFR TO-247 D3PAK SVFR • Faster Switching • Avalanche Energy Rated D • Lower Leakage • TO-247 or Surface Mount D3PAK Package • Fast Recovery Body Diode G S MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.
063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 APT5015BVFR_SVFR 500 32 128 ±30 ±40 370 2.
96 -55 to 150 300 30 30 1300 UNIT Volts Amps Volts Watts W/°C °C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 500 ID(on) On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V) 32 RDS(on) Drain-Source On-State Resistance 2 (VGS = 10V, 0.
5 ID[Cont.
]) IDSS Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.
8 VDSS, VGS = 0V, TC = 125°C) IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 1.
0mA) 2 0.
15 250 1000 ±100 4 CAUTION: These Devices are Sensitive to Electrostatic Discharge.
Proper Handling Procedures Should Be Followed.
APT Website - http://www.
advancedpower.
com UNIT Volts Amps Ohms µA nA Volts 050-5627 Rev A 1-2005 DYNAMIC CHARACTERISTICS Symbol Ciss Coss Cr...


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