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R6004KNJ


Part Number R6004KNJ
Manufacturer INCHANGE
Title N-Channel MOSFET
Description ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT...
Features
·Drain Current
  –ID= 4A@ TC=25℃
·Drain Source Voltage- : VDSS=600V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 980mΩ(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
·Designed for use in switch mode power supplies and...

File Size 250.99KB
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R6004KNX : R6004KNX   Nch 600V 4A Power MOSFET    Datasheet lOutline VDSS 600V   RDS(on)(Max.) 0.98Ω ID ±4.0A TO-220FM PD 40W          lFeatures 1) Low on-resistance 2) Ultra fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lInner circuit lApplication Switching lPackaging specifications Code Packing C7 G Tube C7 Tube* - (Blank) Bulk* *Package dimensions are different lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current VDSS ID*1 IDP*2 600 V ±4.0 A ±12 A Gate - Source voltage static AC(f>1Hz) VGSS ±20 V ±30 V Avalanche cu.

R6004KNX : ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 4 A IDM Drain Current-Single Pluse 8 A PD Total Dissipation @TC=25℃ 40 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 3.13 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor R6004KNX ELECTRICAL CHARACTERISTICS TC=25℃ unless otherw.




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