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R6007ENX

ROHM
Part Number R6007ENX
Manufacturer ROHM
Description Power MOSFET
Published Mar 1, 2021
Detailed Description R6007ENX 　　Nch 600V 7A Power MOSFET 　　 Datasheet lOutline VDSS 600V 　 RDS(on)(Max.) 0.62Ω ID ±7A TO-220FM PD ...
Datasheet PDF File R6007ENX PDF File

R6007ENX
R6007ENX

Overview
R6007ENX 　　Nch 600V 7A Power MOSFET 　　 Datasheet lOutline VDSS 600V 　 RDS(on)(Max.
) 0.
62Ω ID ±7A TO-220FM PD 46W 　 　　　　　　 lInner circuit lFeatures 1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to 　　be ±20V.
4) Drive circuits can be simple.
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant lPackaging specifications Packing Bulk Reel size (mm) - lApplication Switching Tape width (mm) - Type Quantity (pcs) 500 Taping code - Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value R6007ENX Unit Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage TC = 25°C TC = 100°C static AC(f＞1Hz) VDSS ID*1 ID*1 IDP*2 VGSS 600 V ±7 A ±3.
8 A ±14 A ±20 V ±30 V Avalanche current, repetitive IAR 1.
3 A Avalanche energy, single pulse EAS*3 133 mJ Avalanche energy, repetitive EAR*3 0.
2 mJ Power dissipation (TC = 25°C) PD*4 46 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55～+150 ℃ 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.
rohm.
com © 2019 ROHM Co.
, Ltd.
All rights reserved.
1/12 20190527 - Rev.
002 　 　 R6007ENX 　 　 　 　　 　 lAbsolute maximum ratings (Ta = 25°C) Parameter Reverse diode dv/dt Drain - Source voltage slope 　 　 　 　 　 　 　 　 Datasheet Symbol dv/dt Conditions - Values Unit 15 V/ns dv/dt VDS = 480V, Tj = 25℃ 50 V/ns lThermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s Symbol RthJC RthJA Tsold Values Unit Min.
Typ.
Max.
- - 2.
7 ℃/W - - 70 ℃/W - - 265 ℃ lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA Zero gate voltage drain current Gate - Source leakage current Gate threshold voltag...


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