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R6011ENX

ROHM
Part Number R6011ENX
Manufacturer ROHM
Description Power MOSFET
Published Mar 1, 2021
Detailed Description R6011ENX 　　Nch 600V 11A Power MOSFET 　　 Datasheet lOutline VDSS 600V 　 RDS(on)(Max.) 0.39Ω ID ±11A TO-220FM P...
Datasheet PDF File R6011ENX PDF File

R6011ENX
R6011ENX

Overview
R6011ENX 　　Nch 600V 11A Power MOSFET 　　 Datasheet lOutline VDSS 600V 　 RDS(on)(Max.
) 0.
39Ω ID ±11A TO-220FM PD 53W 　 　　　　　　 lFeatures 1) Low on-resistance 2) Fast switching 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free plating ; RoHS compliant lInner circuit lApplication Switching lPackaging specifications Code Packing C7 G Tube C7 Tube* - (Blank) Bulk* *Package dimensions are different lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current VDSS ID*1 IDP*2 600 V ±11 A ±22 A Gate - Source voltage static AC(f＞1Hz) VGSS ±20 V ±30 V Avalanche current, repetitive Avalanche energy, single pulse Avalanche energy, repetitive IAS EAS*3 EAS*3 1.
8 A 210 mJ 0.
32 mJ Power dissipation (Tc = 25°C) PD 53 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.
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com © 2019 ROHM Co.
, Ltd.
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1/12 20190603 - Rev.
002 　 　 R6011ENX 　 　 　 　　 　 lAbsolute maximum ratings (Ta = 25°C) Parameter Reverse diode dv/dt Drain - Source voltage slope 　 　 　 　 　 　 　 　 Datasheet Symbol dv/dt Conditions - Values Unit 15 V/ns dv/dt VDS = 480V, Tj = 25℃ 50 V/ns lThermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s Symbol RthJC RthJA Tsold Values Unit Min.
Typ.
Max.
- - 2.
4 ℃/W - - 70 ℃/W - - 265 ℃ lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA Zero gate voltage drain current Gate - Source leakage current Gate threshold voltage Static drain - source on - state resistance Gate resistance VDS = 600V, VGS = 0V IDSS Tj = 25°C Tj = 125°C IGSS VGS = ±20V, VDS ...


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