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R6520ENX

ROHM
Part Number R6520ENX
Manufacturer ROHM
Description Power MOSFET
Published Mar 1, 2021
Detailed Description R6520ENX 　　Nch 650V 20A Power MOSFET 　　 Datasheet lOutline VDSS 650V 　 RDS(on)(Max.) 0.205Ω ID ±20A TO-220FM ...
Datasheet PDF File R6520ENX PDF File

R6520ENX
R6520ENX

Overview
R6520ENX 　　Nch 650V 20A Power MOSFET 　　 Datasheet lOutline VDSS 650V 　 RDS(on)(Max.
) 0.
205Ω ID ±20A TO-220FM PD 68W 　 　　　　　　 lFeatures 1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lInner circuit lApplication Switching lPackaging specifications Code Packing C7 G Tube C7 Tube* - (Blank) Bulk* *Package dimensions are different lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current VDSS ID*1 IDP*2 650 V ±20 A ±60 A Gate - Source voltage Static AC (f＞1Hz) VGSS ±20 V ±30 V Avalanche current, single pulse Avalanche energy, single pulse Power dissipation (Tc = 25°C) IAS EAS*3 PD 3.
4 A 444 mJ 68 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.
rohm.
com © 2019 ROHM Co.
, Ltd.
All rights reserved.
1/12 20200203 - Rev.
002 　 　 R6520ENX 　 　 　 　　 　 lThermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s 　 　 　 　 　 　 　 　 Datasheet 　 　 　　　　　　　　　　　　　　　　 Symbol RthJC*4 RthJA Tsold Values Unit Min.
Typ.
Max.
- - 1.
8 ℃/W - - 70 ℃/W - - 265 ℃ lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Drain - Source breakdown voltage Zero gate voltage drain current Gate - Source leakage current Gate threshold voltage Static drain - source on - state resistance Gate resistance V(BR)DSS VGS = 0V, ID = 1mA VDS = 650V, VGS = 0V IDSS Tj = 25°C Tj = 125°C IGSS VGS = ±20V, VDS = 0V VGS(th) VDS = VGS, ID = 630μA VGS = 10V, ID = 9.
5A RDS(on)*5 Tj = 25°C Tj = 125°C RG f = 1MHz, open drain Values Unit Min.
Typ.
Max.
650 - - V 　 　 　 - - 100 μA - - 1000 - - ±100 nA 2 - 4 V 　 　 　 - 0.
185 0.
205...


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