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RCJ081N20

INCHANGE
Part Number RCJ081N20
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Mar 1, 2021
Detailed Description isc N-Channel MOSFET Transistor RCJ081N20 FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS=200V(M...
Datasheet PDF File RCJ081N20 PDF File

RCJ081N20
RCJ081N20


Overview
isc N-Channel MOSFET Transistor RCJ081N20 FEATURES ·Drain Current –ID= 8A@ TC=25℃ ·Drain Source Voltage- : VDSS=200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.
77Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 8 A IDM Drain Current-Single Pluse 32 A PD Total Dissipation @TC=25℃ 40 W TJ Max.
Operating Junction Temperature 150 ℃ Tstg ...



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