DatasheetsPDF.com

RCJ120N25

INCHANGE
Part Number RCJ120N25
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Mar 1, 2021
Detailed Description isc N-Channel MOSFET Transistor RCJ120N25 FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS=250V(...
Datasheet PDF File RCJ120N25 PDF File

RCJ120N25
RCJ120N25

Overview
isc N-Channel MOSFET Transistor RCJ120N25 FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS=250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 235mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 250 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 12 A IDM Drain Current-Single Pluse 48 A PD Total Dissipation @TC=25℃ 107 W TJ Max.
Operating Junction Temperature 150 ℃ Tst...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)