DatasheetsPDF.com

RCX160N20

ROHM
Part Number RCX160N20
Manufacturer ROHM
Description Power MOSFET
Published Mar 1, 2021
Detailed Description RCX160N20 Nch 200V 16A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 200V 180m 16A 43W Features 1) Low on-resis...
Datasheet PDF File RCX160N20 PDF File

RCX160N20
RCX160N20


Overview
RCX160N20 Nch 200V 16A Power MOSFET Datasheet VDSS RDS(on) (Max.
) ID PD 200V 180m 16A 43W Features 1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
5) Pb-free lead plating ; RoHS compliant 6) 100% Avalanche tested Application Switching Power Supply Automotive Motor Drive Automotive Solenoid Drive Absolute maximum ratings (Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Pulsed drain current Tc = 25°C Tc = 100°C Gate - Source voltage Avalanche energy, single pulse Avalanche current Power dissipation Junction temperature Tc = 25°C Ta = 25°C Range of storage temperature Outline TO-220FM Inner circuit (1) (2) (3) ∗1 (1) (2) (3) (1) Gate (2) Drain (3) Source 1 BODY DIODE Packaging specifications Packaging Reel size (mm) Tape width (mm) Type Quantity (pcs) Taping code Marking Bulk - 500 - RCX160N20 Symbol Value Unit VDSS 200 V ID *1 16 A ID *1 8.
7 A ID,pulse *2 64 A VGSS 30 V EAS *3 20.
7 mJ IAS *3 8.
0 A PD 43 W PD 2.
23 W Tj 150 °C Tstg 55 to 150 °C www.
rohm.
com © 2015 ROHM Co.
, Ltd.
All rights reserved.
1/12 2019.
05 - Rev.
C RCX160N20 Thermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s Data Sheet Symbol RthJC RthJA Tsold Values Unit Min.
Typ.
Max.
- - 2.
88 °C/W - - 56 °C/W - - 265 °C Electrical characteristics (Ta = 25°C) Parameter Symbol Conditions Values Unit Min.
Typ.
Max.
Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA 200 - - V Zero gate voltage drain current VDS = 200V, VGS = 0V - Tj = 25°C IDSS VDS = 200V, VGS = 0V - Tj = 125°C - 10 A - 100 Gate - Source leakage current IGSS VGS = 30V, VDS = 0V - - 100 nA Gate threshold voltage VGS (th) VDS = 10V, ID = 1mA 3.
25 - 5.
25 V Static drain - source on - state resistance VGS = 10V, ID = 8.
0A RDS(on) *4 VGS = 10V,...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)