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C4391

Panasonic
Part Number C4391
Manufacturer Panasonic
Description Silicon NPN Transistor
Published Mar 2, 2021
Detailed Description Transistors 2SC4391 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1674 ...
Datasheet PDF File C4391 PDF File

C4391
C4391


Overview
Transistors 2SC4391 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SA1674 6.
9±0.
1 0.
7 4.
0 Unit: mm 2.
5±0.
1 (0.
8) (0.
5) (1.
0) (0.
2) 4.
5±0.
1 ■ Features • Low collector-emitter saturation voltage VCE(sat) 0.
65 max.
(1.
0) 14.
5±0.
5 • High collector-emitter voltage (Base open) VCEO • Allowing supply with the radial taping ■ Absolute Maximum Ratings Ta = 25°C / Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 80 V c type Collector-emitter voltage (Base open) VCEO 80 V n d ge.
ed Emitter-base voltage (Collector open) VEBO 5 V le sta ntinu Collector current IC 1 A a e cyc isco Peak collector current ICP 1.
5 A life d, d Collector power dissipation * PC 1 W n u duct type Junction temperature Tj 150 °C te tin Pro ued Storage temperature Tstg −55 to +150 °C four ontin Note) *: Copper plate at the collector is more than 1 cm2 in area, 1.
7 mm in thickness 0.
45+–00.
.
0150 2.
5±0.
5 1.
05±0.
05 2.
5±0.
5 0.
45+–00.
.
0150 123 1: Emitter 2: Collector 3: Base MT-2-A1 Package in n es follopwliannged disc ■ Electrical Characteristics Ta = 25°C ± 3°C a o clud pe, Parameter Symbol Conditions Min c ed in ce ty Collector-base voltage (Emitter open) tinu nan Collector-emitter voltage (Base open) M is iscon ainte Emitter-base voltage (Collector open) e/D e, m Collector-base cutoff current (Emitter open) D anc typ Forward current transfer ratio Maintentenance Collector-emitter saturation voltage *1 main Base-emitter saturation voltage *1 ned Transition frequency (pla Collector output capacitance VCBO VCEO VEBO ICBO hFE1 *2 hFE2 *1 VCE(sat) VBE(sat) fT Cob IC = 10 µA, IE = 0 80 IC = 1 mA, IB = 0 80 IE = 10 µA, IC = 0 5 VCB = 40 V, IE = 0 VCE = 2 V, IC = 100 mA 120 VCE = 2 V, IC = 500 mA 60 IC = 500 mA, IB = 50 mA IC = 500 mA, IB = 50 mA VCB = 10 V, IE = −50 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz Typ Max 0.
1 340 0.
15 0.
30 0.
85 1.
20 120 10 20 Unit V V V µA  V...


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