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C4809

Panasonic
Part Number C4809
Manufacturer Panasonic
Description Silicon NPN Transistor
Published Mar 2, 2021
Detailed Description Transistors 2SC4809 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing ■ Features •...
Datasheet PDF File C4809 PDF File

C4809
C4809

Overview
Transistors 2SC4809 Silicon NPN epitaxial planar type For high-frequency amplification/oscillation/mixing ■ Features • High transition frequency fT • Small collector output capacitance (Common base, input open cir- 0.
2+–00.
.
015 3 0.
15+–00.
.
015 0.
8±0.
1 1.
6±0.
15 1˚ 0.
2±0.
1 cuited) Cob and reverse transfer capacitance (Common emitter) Crb • SS-Mini type package, allowing downsizing of the equipment and (0.
4) automatic insertion through the tape packing / ■ Absolute Maximum Ratings Ta = 25°C 1 2 (0.
5) (0.
5) 1.
0±0.
1 1.
6±0.
1 5˚ Parameter Symbol Rating Unit e e) Collector-base voltage (Emitter open) VCBO 15 (0.
3) 0.
75±0.
15 V c e.
d typ Collector-emitter voltage (Base open) VCEO 10 V n d stag tinue Emitter-base voltage (Collector open) VEBO 3 0 to 0.
1 0.
45±0.
1 V a e cle con Collector current IC 50 mA lifecy , dis Collector power dissipation PC 125 mW n u ct ped Junction temperature Tj 125 °C te tin Produ ed ty Storage temperature Tstg −55 to +125 °C 1: Base 2: Emitter 3: Collector EIAJ: SC-75 SSMini3-G1 Package Marking Symbol: 1S wing foudriscontinu ■ Electrical Characteristics Ta = 25°C ± 3°C in n s follo laned Parameter Symbol Conditions a o lude e, p Collector-emitter voltage (Base open) inc typ Emitter-base voltage (Collector open) c tinued ance Collector-base cutoff current (Emitter open) M is con inten Forward current transfer ratio *1 /Dis ma hFE ratio *2 D tenancece type, Collector-emitter saturation voltage ain nan Transition frequency M ainte Collector output capacitance m (Common base, input open circuited) VCEO VEBO ICBO hFE ∆hFE VCE(sat) fT Cob IC = 2 mA, IB = 0 IE = 10 µA, IC = 0 VCB = 10 V, IE = 0 VCE = 4 V, IC = 5 mA hFE2: VCE = 4 V, IC = 100 µA hFE1: VCE = 4 V, IC = 5 mA IC = 20 mA, IB = 4 mA VCB = 4 V, IE = −5 mA, f = 200 MHz VCB = 4 V, IE = 0, f = 1 MHz laned Reverse transfer capacitance (p (Common emitter) Crb VCB = 4 V, IE = 0, f = 1 MHz Min Typ Max Unit 10 V 3 V 1 µA 75 400  0.
75 1.
60 ...


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