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2N6329

Part Number	2N6329
Manufacturer	INCHANGE
Description	Silicon PNP Power Transistor
Published	Mar 12, 2021
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : VCEO=-60V(Min) ·Minimum Lot-to-Lot...
Datasheet	2N6329 PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : VCEO=-60V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PD Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -30 A 200 W -65~200 ℃ Tstg Storage Temperature Range -65~200 ℃ 2N6329 isc website： www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Tr...

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