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DKG1020

INCHANGE
Part Number DKG1020
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Mar 14, 2021
Detailed Description isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=70A@ TC=25℃ ·Drain Source Voltage- : VDSS=40V(Min) ·Static ...
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DKG1020
DKG1020

Overview
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=70A@ TC=25℃ ·Drain Source Voltage- : VDSS=40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 20 A PD Total Dissipation @TC=25℃ 40 W TJ Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 3.
125 ℃/W DKG1020 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)D...


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