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RD3G400GN

INCHANGE
Part Number RD3G400GN
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Mar 15, 2021
Detailed Description isc N-Channel MOSFET Transistor RD3G400GN FEATURES ·Drain Current –ID= 40A@ TC=25℃ ·Drain Source Voltage- : VDSS= 40V(...
Datasheet PDF File RD3G400GN PDF File

RD3G400GN
RD3G400GN

Overview
isc N-Channel MOSFET Transistor RD3G400GN FEATURES ·Drain Current –ID= 40A@ TC=25℃ ·Drain Source Voltage- : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7.
5mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 40 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 40 A IDM Drain Current-Single Pluse 80 A PD Total Dissipation @TC=25℃ 26 W TJ Max.
Operating Junction Temperature 150 ℃ Tstg ...


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