DatasheetsPDF.com

RD3G500GN

INCHANGE
Part Number RD3G500GN
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Mar 15, 2021
Detailed Description isc N-Channel MOSFET Transistor RD3G500GN FEATURES ·Drain Current –ID= 50A@ TC=25℃ ·Drain Source Voltage- : VDSS= 40V(...
Datasheet PDF File RD3G500GN PDF File

RD3G500GN
RD3G500GN

Overview
...Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.
9mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 40 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 50 A IDM Drain Current-Single Pluse 100 A PD Total Dissipation @TC=25℃ 35 W TJ Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Ca...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)