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RD3P130SP

INCHANGE
Part Number RD3P130SP
Manufacturer INCHANGE
Description P-Channel MOSFET
Published Mar 15, 2021
Detailed Description isc P-Channel MOSFET Transistor RD3P130SP FEATURES ·Drain Current –ID= -13A@ TC=25℃ ·Drain Source Voltage- : VDSS= -10...
Datasheet PDF File RD3P130SP PDF File

RD3P130SP
RD3P130SP

Overview
isc P-Channel MOSFET Transistor RD3P130SP FEATURES ·Drain Current –ID= -13A@ TC=25℃ ·Drain Source Voltage- : VDSS= -100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 200mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous -13 A IDM Drain Current-Single Pluse -52 A PD Total Dissipation @TC=25℃ 20 W TJ Max.
Operating Junction Temperature 150 ℃...


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