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RD3U041AAFRA

ROHM
Part Number RD3U041AAFRA
Manufacturer ROHM
Description Power MOSFET
Published Mar 15, 2021
Detailed Description RD3U041AAFRA 　　Nch 250V 4A Power MOSFET 　　 Datasheet lOutline VDSS 250V 　 RDS(on)(Max.) 1.3Ω DPAK ID ±4.0A TO...
Datasheet PDF File RD3U041AAFRA PDF File

RD3U041AAFRA
RD3U041AAFRA


Overview
RD3U041AAFRA 　　Nch 250V 4A Power MOSFET 　　 Datasheet lOutline VDSS 250V 　 RDS(on)(Max.
) 1.
3Ω DPAK ID ±4.
0A TO-252 PD 29W 　 　　　　　　 lFeatures 1) Low on-resistance 2) Fast switching 3) Drive circuits can be simple 4) Pb-free plating ; RoHS compliant 5) AEC-Q101 Qualified lInner circuit lPackaging specifications Packing Embossed Tape Reel size (mm) 330 lApplication Switching Power Supply Type Tape width (mm) Quantity (pcs) 16 2500 Taping code TL Marking RD3U041AA lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage VDSS 250 V Continuous drain current (Tc = 25°C) ID*1 ±4.
0 A Pulsed drain current IDP*2 ±16 A Gate - Source voltage VGSS ±30 V Avalanche current, single pulse IAS*3 2.
0 A Avalanche energy, single pulse EAS*3 1.
61 mJ Power dissipation (Tc = 25°C) PD*4 29 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃ 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.
rohm.
com © 2019 ROHM Co.
, Ltd.
All rights reserved.
1/11 20191024 - Rev.
003 　 　 RD3U041AAFRA 　 　 　 　　 　 lThermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s 　 　 　 　 　 　 　 　 Datasheet 　 　 　　　　　　　　　　　　　　　　 Symbol RthJC*4 RthJA*5 Tsold Values Unit Min.
Typ.
Max.
- - 4.
3 ℃/W - - 100 ℃/W - - 265 ℃ lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA Zero gate voltage drain current Gate - Source leakage current Gate threshold voltage Static drain - source on - state resistance Gate resistance IDSS VDS = 250V, VGS = 0V IGSS VGS(th) VGS = ±30V, VDS = 0V VDS = 10V, ID = 1mA RDS(on)*6 VGS = 10V, ID = 2.
0A RG f = 1MHz, open drain Values Unit Min.
Typ.
Max.
250 - - V - - 10 μA - - ±100 nA 3.
5...


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