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BD139-10

ON Semiconductor
Part Number BD139-10
Manufacturer ON Semiconductor
Description NPN Epitaxial Silicon Transistor
Published Mar 16, 2021
Detailed Description BD135 / 137 / 139 — NPN Epitaxial Silicon Transistor BD135 / 137 / 139 NPN Epitaxial Silicon Transistor Features • Com...
Datasheet PDF File BD139-10 PDF File

BD139-10
BD139-10

Overview
BD135 / 137 / 139 — NPN Epitaxial Silicon Transistor BD135 / 137 / 139 NPN Epitaxial Silicon Transistor Features • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching 1 TO-126 1.
Emitter 2.
Collector 3.
Base Ordering Information Part Number BD13516S BD1356STU BD13510STU BD13516STU BD13716STU BD13710STU BD13716S BD13916STU BD13910S BD13916S BD1396STU BD13910STU Marking BD135-16 BD135-6 BD135-10 BD135-16 BD137-16 BD137-10 BD137-16 BD139-16 BD139-10 BD139-16 BD139-6 BD139-10 Package TO-126 3L Packing Method Bulk Rail Bulk Rail Bulk Rail © 2007 Semiconductor Components Industries, LLC.
November-2017, Rev.
2 Publication Order Number: BD139/D BD135 / 137 / 139 — Features Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device.
The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Values are at TC = 25°C unless otherwise noted.
Symbol Parameter Value Units BD135 45 VCBO Collector-Base Voltage BD137 BD139 60 V 80 VCEO Collector-Emitter Voltage BD135 BD137 45 60 V BD139 80 VEBO IC ICP IB PC TJ TSTG Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Device Dissipation Junction Temperature Storage Temperature 5 V 1.
5 A 3.
0 A 0.
5 A TC = 25°C 12.
5 W TA = 25°C 1.
25 W 150 °C - 55 to +150 °C Electrical Characteristics Values are at TC = 25°C unless otherwise noted.
Symbol Parameter VCEO(sus) ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(on) Collector-Emitter Sustaining Voltage Collector Cut-off Current Emitter Cut-off Current BD135 BD137 BD139 DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Test Condition IC = 30 mA, IB =...


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