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SEMiX603GB12E4SiCp

Semikron
Part Number SEMiX603GB12E4SiCp
Manufacturer Semikron
Description IGBT
Published Mar 22, 2021
Detailed Description SEMiX603GB12E4SiCp SEMiX® 3p Trench IGBT Modules SEMiX603GB12E4SiCp Features • With Silicon Carbide (SiC) Schottky diod...
Datasheet PDF File SEMiX603GB12E4SiCp PDF File

SEMiX603GB12E4SiCp
SEMiX603GB12E4SiCp

Overview
SEMiX603GB12E4SiCp SEMiX® 3p Trench IGBT Modules SEMiX603GB12E4SiCp Features • With Silicon Carbide (SiC) Schottky diodes • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • Press-fit pins as auxiliary contacts • Thermally optimized ceramic • UL recognized, file no.
E63532 Typical Applications* • AC inverter drives • UPS • Renewable energy systems Remarks • Product reliability results are valid for Tj=150°C • Visol between temperature sensor and power section is only 2500V • RG off must be at least 16Ω in case VCC ≥ 900V • For storage and case temperature with TIM see document “TP(*) SEMiX 3p” GB © by SEMIKRON Absolute Maximum Ratings Symbo...


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