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SK200GB12T4Tp

Semikron
Part Number SK200GB12T4Tp
Manufacturer Semikron
Description IGBT
Published Mar 22, 2021
Detailed Description SK200GB12T4Tp SEMITOP® 4 Press-Fit IGBT module Engineering Sample SK200GB12T4Tp Target Data Features • One screw mounti...
Datasheet PDF File SK200GB12T4Tp PDF File

SK200GB12T4Tp
SK200GB12T4Tp

Overview
SK200GB12T4Tp SEMITOP® 4 Press-Fit IGBT module Engineering Sample SK200GB12T4Tp Target Data Features • One screw mounting module • Solder free mounting with Press-Fit terminals • Fully compatible with SEMITOP® 2 and 3 Press-Fit • Improved thermal performances by aluminum oxide substrate • Trench4 IGBT technology • CAL4F diode technology • Integrated PTC temperature sensor • UL recognized, file no.
E 63 532 Typical Applications* • Switching SR Drives • Inverter • Switched mode power supplies • UPS Absolute Maximum Ratings Symbol Conditions Inverter - IGBT VCES IC Tj = 25 °C Tj = 175 °C Ts = 25 °C Ts = 70 °C ICnom ICRM VGES tpsc Tj ICRM = 3 x ICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 150 °C Inverse - Diode VRRM IF Tj = 25 °C Tj = 175 °C Ts = 25 °C Ts = 70 °C IFnom IFRM IFSM Tj IFRM = 3 x IFnom 10 ms, sin 180°, Tj = 150 °C Module It(RMS) Tstg Visol Tterminal = 100 °C, TS = 60°C AC, sinusoidal, 50Hz, t = 1 min Characteristics Symbol Conditions Inverter - IGBT VCE(sat) IC = 200 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C VCE0 chiplevel Tj = 25 °C Tj = 150 °C rCE VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C VGE(th) VGE = VCE, IC = 12 mA ICES VGE = 0 V, VCE = 1200 V, Tj = 25 °C Cies Coes Cres VCE = 25 V VGE = 0 V f = 1 MHz f = 1 MHz f = 1 MHz QG -8V.
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+15V RGint Tj = 25 °C td(on) tr Eon td(off) VCC = 600 V IC = 200 A RG on = 2 Ω RG off = 2 Ω Tj = 150 °C Tj = 150 °C Tj = 150 °C Tj = 150 °C tf Tj = 150 °C Eoff VGE = +15/-15 V Tj = 150 °C Rth(j-s) per IGBT Values 1200 210 170 200 600 -20 .
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20 10 -40 .
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175 1200 190 151 200 600 990 -40 .
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175 40 -40 .
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125 2500 Unit V A A A A V µs °C V A A A A A °C A °C V min.
5 typ.
1.
80 2.
20 0.
80 0.
70 5.
0 7.
5 5.
8 12.
3 0.
81 0.
69 1130 3.
8 13.
6 22.
1 0.
28 max.
Unit 2.
05 V 2.
40 V 0.
90 V 0.
80 V 5.
8 mΩ 8.
0 mΩ 6.
5 V 2.
66 mA nF nF nF nC Ω ns ns mJ ns ns mJ K/W GB-T © by SEMIKRON Rev.
0.
1 – 09.
02.
2017 1 SK200GB12T4Tp SEMITOP® 4 Press-Fit IGBT module Enginee...


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