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FDC655BN

ON Semiconductor
Part Number FDC655BN
Manufacturer ON Semiconductor
Description Single N-Channel MOSFET
Published Mar 27, 2021
Detailed Description MOSFET – Single, N-Channel, Logic Level, POWERTRENCH) 30 V, 6.3 A, 25 mW FDC655BN General Description This N−Channel Lo...
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FDC655BN
FDC655BN

Overview
MOSFET – Single, N-Channel, Logic Level, POWERTRENCH) 30 V, 6.
3 A, 25 mW FDC655BN General Description This N−Channel Logic Level MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in−line power loss and fast switching are required.
Features • Max RDS(ON) = 25 mW @ VGS = 10 V, ID = 6.
3 A • Max RDS(ON) = 33 mW @ VGS = 4.
5 V, ID = 5.
5 A • Fast Switching • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(ON) • This Device is Pb−Free, Halide Free and is RoHS Compliant MOSFET MAXIMUM RATINGS (TC = 25°C, unless otherwise noted) Symbol Parameter Value Unit VDS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±20 V ID −Continuous TA = 25°C (Note 1a) 6.
3 A −Pulsed 20 PD Power Dissipation (Note 1a) 1.
6 W (Note 1b) 0.
8 TJ, T...


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