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SEMiX223GB17E4p

Semikron
Part Number SEMiX223GB17E4p
Manufacturer Semikron
Description IGBT
Published Mar 27, 2021
Detailed Description SEMiX223GB17E4p SEMiX® 3p Trench IGBT Modules SEMiX223GB17E4p Features* • Homogeneous Si • Trench = Trenchgate technolo...
Datasheet PDF File SEMiX223GB17E4p PDF File

SEMiX223GB17E4p
SEMiX223GB17E4p

Overview
SEMiX223GB17E4p SEMiX® 3p Trench IGBT Modules SEMiX223GB17E4p Features* • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • Press-fit pins as auxiliary contacts • UL recognized, file no.
E63532 Typical Applications • AC inverter drives • UPS • Renewable energy systems Remarks • Product reliability results are valid for Tj=150°C • Visol between temperature sensor and power section is only 2500V • For storage and case temperature with TIM see document “TP(*) SEMiX 3p” Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C ICnom ICRM VGES tpsc Tj VCC = 1000 V VGE ≤ 15 V VCES ≤ 1700 V Tj = 150 °C Inverse diode VRRM IF Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C IFRM IFSM tp = 10 ms, sin 180°, Tj = 25 °C Tj Module It(RMS) Tstg module without TIM Visol AC sinus 50Hz, t = 1 min Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th...


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