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SEMiX302GAL17E4s

Part Number	SEMiX302GAL17E4s
Manufacturer	Semikron
Description	IGBT
Published	Mar 27, 2021
Detailed Description	SEMiX302GAL17E4s SEMiX® 2s SEMiX302GAL17E4s Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with ...
Datasheet	SEMiX302GAL17E4s PDF File

Overview

SEMiX302GAL17E4s SEMiX® 2s SEMiX302GAL17E4s Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognized, file no.
E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Remarks • Case temperature limited to TC=125°C max.
• Product reliability results are valid for Tj=150°C • Dynamic values apply to the following combination of resistors: RGon,main = 1,95 Ω RGoff,main = 1,95 Ω RG,X = 2,2 Ω RE,X = 0,5 Ω Absolute Maximum Ratings Symbol Conditions IGBT VCES IC ICnom ICRM VGES tpsc Tj Tj = 25 °C Tj = 175 °C ICRM = 3xICnom VCC = 1000 V VGE ≤ 15 V VCES ≤ 1700 V Tc = 25 °C Tc = 80 °C Tj = 150 °C Inverse diode VRRM IF Tj = 25 °C Tj = 175 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFSM Tj IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C Freewheeling diode VRRM IF Tj = 25 °C Tc = 25 °C Tc = 80 °C IFnom IFRM IFSM Tj IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C Module It(RMS) Tstg Visol AC sinus 50Hz, t = 1 min Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint IC = 300 A VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C chiplevel Tj = 25 °C Tj = 150 °C VGE = 15 V chiplevel Tj = 25 °C Tj = 150 °C VGE=VCE, IC = 12 mA VGE = 0 V VCE = 1700 V Tj = 25 °C VCE = 25 V VGE = 0 V f = 1 MHz f = 1 MHz f = 1 MHz VGE = - 8 V.
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+ 15 V Tj = 25 °C GAL © by SEMIKRON Rev.
2 – 20.
02.
2015 Values 1700 516 392 300 900 -20 .
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20 10 -40 .
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175 1700 324 238 300 600 1710 -40 .
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175 1700 324 238 300 600 1710 -40 .
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175 600 -40 .
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125 4000 Unit V A A A A V µs °C V A A A A A °C V A A A A A °C A °C V min.
typ.
max.
Unit 1.
90 2.
20 V 2.
26 2.
45 V 1.
1 1.
2 V 1 1.
1 V 2.
7 3.
3 mΩ 4.
2 4.
5 mΩ 5.
2 5.
8 6.
4 V 4 mA mA 24 nF 1.
00 nF 0.
76 nF 2400 nC 2.
50 Ω 1 SEMiX302GAL17E4s SEMiX® 2s SEMiX302GAL17E4s Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive tempera...

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