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SMMBT3906LT3G

ON Semiconductor
Part Number SMMBT3906LT3G
Manufacturer ON Semiconductor
Description PNP Transistor
Published Mar 30, 2021
Detailed Description MMBT3906L, SMMBT3906L General Purpose Transistor PNP Silicon Features • S Prefix for Automotive and Other Applications...
Datasheet PDF File SMMBT3906LT3G PDF File

SMMBT3906LT3G
SMMBT3906LT3G

Overview
MMBT3906L, SMMBT3906L General Purpose Transistor PNP Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Collector Current − Peak (Note 3) THERMAL CHARACTERISTICS Symbol VCEO VCBO VEBO IC ICM Value −40 −40 −5.
0 −200 −800 Unit Vdc Vdc Vdc mAdc mAdc Characteristic Total Device Dissipation FR− 5 Board (Note 1) @ TA = 25°C Derate above 25°C Symbol PD Max 225 1.
8 Unit mW mW/°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) @ TA = 25°C Derate above 25°C RqJA PD 556 °C/W 300 mW 2.
4 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg −65 to +150 °C Stresses exceeding those l...


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