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LSC20N65 Datasheet PDF


Part Number LSC20N65
Manufacturer Lonten
Title N-channel MOSFET
Description LonFETTM Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it espe...
Features
 Ultra low Rdson
 Ultra low gate charge (typ. Qg = 68nC)
 100% UIS tested
 RoHS compliant D G S N-Channel MOSFET Pb Absolute Maximum Ratings Parameter Drain-Source Voltage Continuous drain current Pulsed drain current 1) ( TC = 25°C ) ( TC = 100°C ) Gate-Source voltage Avalanche energy...

File Size 497.50KB
Datasheet LSC20N65 PDF File








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LSC20N60 : LonFETTM Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency. Product Summary VDS @ Tj,max 650V RDS(ON),max 0.18Ω IDM 60A Qg,typ 68nC Features  Ultra low Rdson  Ultra low gate charge (typ. Qg = 68nC)  100% UIS tested  RoHS compliant D G S N-Channel MOSFET Pb Absolute Maximum Ratings Parameter Drain-Source Voltage Continuous drain current Pulsed drain current 1) ( TC = 25°C ) ( TC = 100°C ) Gate-Source voltage Avalanche energy, single pulse 2) Avalanche energy, repetitive 1) Avalanche curr.




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