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60N60FD1

Part Number	60N60FD1
Manufacturer	Silan Microelectronics
Description	600V FIELD-STOP IGBT
Published	Apr 2, 2021
Detailed Description	Silan Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet 60A, 600V FIELD STOP IGBT DESCRIPTION SGT60N60FD1PN/P7/PS/PT ad...
Datasheet	60N60FD1 PDF File

Overview

Silan Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet 60A, 600V FIELD STOP IGBT DESCRIPTION SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technology, offer the optimum performance for induction Heating,UPS,SMPS and PFC application.
FEATURES  60A, 600V,VCE(sat)(typ.
)=2.
2V@IC=60A  Low conduction loss  Fast switching  High input impedance C 2 1 G 3 E 123 TO-247-3L 12 3 TO-247S-3L 123 TO-3P 1 2 3 TO-3PN NOMENCLATURE IGBT series Current, 70: 70A N : N Channel NE : N-channel planar gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 6 X : Field Stop 7 Voltage, 65: 650V 120: 1200V SGT 60 N 60 F D 1 P7 Package P7 : TO-247-3L 1,2,3… : Version No.
Blank: Standard diode M : Standard Diode, full range R : Rapid Diode B : Rapid Diode, full range S : Soft Diode, full range D : Packaged with fast recovery diode R : RC IGBT L : Ultra low switching，recommended frequency ~2KHz Q : Low switching，recommended frequency2~20KHz S : Standard frequency ，recommended frequency5~40KHz F : Fast switching，recommended frequency10~60KHz UF : Ultra fast switching，recommended frequency 40KHz~ ORDERING INFORMATION Part No.
SGT60N60FD1PN SGT60N60FD1P7 SGT60N60FD1PS SGT60N60FD1PT Package TO-3P TO-247-3L TO-247S-3L TO-3PN Marking 60N60FD1 60N60FD1 60N60D1 60N60FD1 Hazardous Substance Control Pb free Pb free Pb free Pb free Packing Type Tube Tube Tube Tube HANGZHOU SILAN MICROELECTRONICS CO.
,LTD http: //www.
silan.
com.
cn Rev.
:1.
7 Page 1 of 10 Silan Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet ABSOLUTE MAXIMUM RATINGS (TC = 25°C UNLESS OTHERWISE NOTED) Characteristics Collector to Emitter Voltage Gate to Emitter Voltage Collector Current TC=25°C TC=100°C Pulsed Collector Current Maximum Power Dissipation (TC=25C) Operating Junction Temperature Storage Temperature Range Symbol VCE VGE IC ICM PD TJ Tstg Ratings 600 ±20 120 60 180 321 -55～+175 -55～+175 Units V V A A W C C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, J...

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60N60FD1 600V FIELD-STOP IGBT - Silan Microelectronics

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