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CGHV96050F2

Wolfspeed
Part Number CGHV96050F2
Manufacturer Wolfspeed
Description GaN HEMT
Published Apr 8, 2021
Detailed Description CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Description Wolfspeed’s CGHV96050F2 is a gallium ...
Datasheet PDF File CGHV96050F2 PDF File

CGHV96050F2
CGHV96050F2

Overview
CGHV96050F2 50 W, 7.
9 - 9.
6 GHz, 50-ohm, Input/Output Matched GaN HEMT Description Wolfspeed’s CGHV96050F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates.
This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies.
GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.
GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors.
This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance.
PN: CGHV96050F2 Package Type: 440217 Typical Performance Over 8.
4 - 9.
6 GHz (TC = 25ºC) Parameter Linear Gain Output Power Power Gain Power Added Efficiency 8.
4 GHz 13.
8 85 10.
4 57 8.
8 GHz 12.
8 77 9.
9 54 9.
0 GHz 12.
3 81 10.
1 52 9.
2 GHz 12.
3 82 10.
1 54 9.
4 GHz 12.
2 75 8.
8 48 Note: Measured in CGHV96050F2-AMP (838179) under 100µs pulse width, 10% duty, PIN 39.
0 dBm (7.
9 W) 9.
6 GHz 11.
8 75 9.
8 45 Units dB W dB % Features • 8.
4 - 9.
6 GHz Operation • 80 W POUT typical • 10 dB Power Gain • 55% Typical PAE • 50 Ohm Internally Matched • <0.
1 dB Power Droop Applications • Marine Radar • Weather Monitoring • Air Traffic Control • Maritime Vessel Traffic Control • Port Security Large Signal Models Available for ADS and MWO Rev.
3.
5, 2022-12-13 4600 Silicon Drive | Durham, NC 27703 | Tel: +1.
919.
313.
5300 © 2022 Wolfspeed, Inc.
All rights reserved.
Wolfspeed  and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc.
The information in this document is subject to change without notice.
CGHV96050F2 2 Absolute Maximum Ratings (not simultaneous) Parameter Drain-source Voltage Gate-source Voltage Power Dissipation Storage Temperature Operating Junction Temperature Maximum Drain Current Maximum Forward Gate Current Solderi...


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